sot-23-3l plastic-encapsulate mosfets cj k 2305 p-channel 12-v(d-s) mosfet feature trenchfet power mosfet applications z load switch for portable devices z dc/dc converter marking: s5 maximum ratings (t a =25 unless otherwise noted) parameter symbol value units drain-source voltage v ds - 12 gate-source voltage v gs 12 v continuous drain current i d -3.5 a pulsed drain current (10 s pulse width ) i dm -10 a power dissipation p d 0.3 a w thermal resistance from junction to ambient ( t 10s) r thja 417 b /w junction temperature t j 150 storage temperature t stg -50 ~+150 notes : a. t=10s. b. maximum under steady state conditions is 175 /w. so t -23-3l 1. gate 2. source 3. drain 1 of 3 sales@zpsemi.com www.zpsemi.com cj k 2305
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a - 12 gate-source thre shold voltage v gs(th) v ds =v gs , i d =-250a -0.42 -1.0 v gate-source leakage i gss v ds =0v, v gs =12v 100 na zero gate voltage drain current i dss v ds =- 12 v, v gs =0v -1 a v gs =-4.5v, i d =-3.5a 0.052 v gs =-2.5v, i d =-3a 0.070 drain-source on-state resistance(note 1) r ds(on) v gs =-1.8v,i d =-2.0a 0.095 ? forward transconductance(note 1) g fs v ds =-5v, i d =-2.8a 8 s dynamic(note 2) input capacitance c iss 1050 output capacitance c oss 190 reverse transfer capacitance c rss v ds =-8v,v gs =0v,f =1mhz 150 pf turn-on delay time t d(on) 10 rise time t r 23 turn-off delay time t d(off) 120 fall time t f v dd =-10v, r l =10 ? , i d =-1a, v gen =-4.5v,r g =6 ? 71 ns drain-source body diode characteristics body diode forward voltage(note 1) v sd i s =-1.25a, v gs = 0v -1.3 v notes: 1. pulse test ; pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify. 2 of 3 sales@zpsemi.com www.zpsemi.com cj k 2305
-0 -2 -4 -6 -8 -10 -12 40 50 60 70 80 90 100 110 -0.0 -0.3 -0.6 -0.9 -1.2 -1.5 -0.01 -0.1 -1 -10 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -0 -2 -4 -6 -8 -10 -0 -2 -4 -6 -8 -10 25 50 75 100 125 -0 -2 -4 -6 -8 -10 -0 -4 -8 -12 -16 on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) r ds(on) v gs ?? t a =25 pulsed i d =-3a t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =25 pulsed on-resistance r ds(on) (m ? ) drain current i d (a) v gs =-4.5v v gs =-2.5v v gs =-1.8v r ds(on) ?? i d i s ?? v sd drain current i d (a) drain to source voltage v ds (v) v gs =-1.5v v gs =-1.8v v gs =-4.5v,-4.0v,-3.5v,-3.0v,-2.5v,-2.0v t a =25 pulsed output characteristics 3 of 3 sales@zpsemi.com www.zpsemi.com cj k 2305 b,dec,2013
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